Article comprising means for modulating the optical transparency

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

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257 15, 257184, 257459, 359248, H01L 2714, H01L 3100

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active

053007891

ABSTRACT:
An article that comprises novel means for modulating the transparency of a semiconductor body in accordance with a modulating signal is disclosed. The body comprises one or more quantum wells (QWs), and the modulation mechanism comprises changing the free carrier distribution function in the QWs. An important feature of the inventive article is the use of (relatively long wavelength) inter-subband radiation (ISBR) to change the transparency of the body for (relatively short wavelength) inter-band radiation (IBR). In preferred embodiments the modulating signal is an electric field applied across the QWs, such that ISBR absorption can be tuned by means of the Stark effect. One embodiment of the invention makes it possible to rapidly modulate IBR, and another embodiment can form narrow (typically less than 10 ps) IBR pulses.

REFERENCES:
patent: 4894526 (1990-01-01), Bethea et al.
patent: 5023685 (1991-06-01), Bethea et al.
patent: 5075749 (1991-12-01), Chi et al.
"Observation of Stark Shifts in Quantum Well Intersubband Transitions", by A. Harwit et al., Applied Physics Letters, 50 (11), Mar. 16, 1987, pp. 685-687.
"Inducing Normally Forbidden Transitions with the Conduction Band of GaAs Quantum Wells", J. L. Pan et al, Applied Physics Letters 57 (4), Jul. 23, 1990, pp. 366-368.
"Rapid Modulation of Interband Optical Properties of Quantum Wells by Intersubband Absorption", by V. B. Gorfinkel et al., Applied Physics Letters, 60 (25), Jun. 22, 1992, pp. 3141-3143.
"All-optical Modulation Using an n-Doped Quantum-Well Structure", by S. Noda et al., Journal of Applied Physics, 68(12), Dec. 15, 1990, pp. 6529-6531.
European Search Report, The Hague, Jul. 26, 1993, Examiner R. Iasevoli.

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