Article comprising magnetoresistive material

Stock material or miscellaneous articles – Coated or structually defined flake – particle – cell – strand,... – Particulate matter

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428403, 428404, 428692, 428694R, 428694T, 428900, 427127, 427128, 427129, 427130, 360113, 338 32R, 324252, 252 6251, G11B 566, B32B 516

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058560084

ABSTRACT:
An article that uses a magnetoresistive material comprising one or more CrO.sub.2 grains having an insulating material, advantageously Cr.sub.2 O.sub.3, along at least a portion of the grain boundary or boundaries, the magnetoresistive article advantageously exhibiting a magnetoresistance ratio greater than 12% at 5K and 20 kOe.

REFERENCES:
patent: 5422571 (1995-06-01), Gurney et al.
patent: 5423373 (1995-06-01), Johnson
patent: 5450372 (1995-09-01), Jin et al.
patent: 5461308 (1995-10-01), Jin et al.
patent: 5538800 (1996-07-01), Jin et al.
patent: 5541868 (1996-07-01), Prinz
patent: 5549977 (1996-08-01), Jin et al.
patent: 5565695 (1996-10-01), Johnson
patent: 5569544 (1996-10-01), Daughton
"Spin Polarization of Electrons Tunneling from Films of Fe, Co, Nii and Gd", by Tedrow, P.M. et al., Physical Review B, vol. 7, No. 1, pp. 318-326 (Jan. 1, 1973).
"Theory of Tunneling Magnetoresistance in Granular Magnetic Films", by Inoue, J. et al., Physical Review B, vol. 53, No. 18, pp. 927-929 (May 1, 1996).
"Spin Polarized Tunneling in Ferromagnet/Insulator/Ferromagnet Junctions," by Miyazaki, T. et al., Journal of Magnetism and Magnetic Materials, 151, pp. 403-410 (1995).
"Large Magnetoreistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions", by Moodera, J. S. et al., Physical Review Letters, vol. 74, No. 16, pp. 3273-3276.
"Observation of Large Low-Field Magnetoresistance in Trilayer Perpendicular Transport Devices Made Using Doped Manganate Perovskites", by Sun, J. Z. et al., Appl. Phys. Lett., 69 (21), pp. 3266-3268 (Nov. 18, 1996).
"Spin-Dependent Electronic Transport in Granular Ferromagnets", by Milner, A. et al., Physical Review Letters, vol. 76, No. 3, pp. 475-478 (Jan. 15, 1996).
"Tunneling of Spin-Polarized Electrons and Magnetoresistance in Granular Ni Films", by Helman, J. S., Physical Review Letters, vol. 37, No. 21, pp. 1429-1432 (Nov. 22, 1976).
"Grain-Boundary Effects on the Magnetoresistance Properties of Perovskite Manganite Films", by Gupta, A. et al., Physical Review B, vol. 54, No. 22, pp. 629-632 (Dec. 1, 1996).
"Spin-Polarized Electron Tunneling", by Meservey, R. et al., Physics Reports, vol. 238, No. 4, pp. 175-243 (Mar. 1994).
"Spin-Polarized Intergrain Tunneling in La.sub.2/3 Sr.sub.1/3 MnO.sub.3 ", by Hwang H. Y. et al., Physical Review Letters, vol. 77, No. 10, pp. 2041-2044 (Sep. 2, 1996).
Lattice Effects on the Magnetoresistance in Doped LaMnO.sub.2, by Hwang, H. Y. et al., Physical Review Letters, vol. 75, No. 5, pp. 914-917 (Jul. 31, 1995).
U.S. application Ser. No. 08/663,851 filed Sep. 14, 1995 (not attached).

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