Article comprising fluorinated amorphous carbon and process for

Details Article comprising fluorinated amorphous carbon and process for Article comprising fluorinated amorphous carbon and process for

1998-03-27

2000-11-14

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257 77, 257632, 257635, H01L 2348

Patent

active

06147407&

ABSTRACT:
The invention provides a device containing a low .kappa., hydrogen-free a-C:F layer with good adhesion and thermal stability. It was found that the combination of desirable properties was attainable by a relatively easy process, as compared to processes that utilize gaseous sources, such as CVD. Specifically, the a-C:F layer is formed by sputter deposition, using only solid sources for the fluorine and carbon, and in the absence of any intentionally-added hydrogen-containing source. The sputtering is performed such that the layer contains 20 to 60 at. % fluorine, and also, advantageously, such that the a-C:F exhibits a bandgap of about 2.0 eV or greater. The a-C:F layer formed by the process of the invention exhibits a dielectric constant, at 1 MHz and room temperature, of 3.0 or less, advantageously 2.5 or less, and more advantageously 2.1 or less, along with being thermally stable up to at least 350.degree. C., advantageously 450.degree. C., and exhibiting a stress of about 100 MPa or less, in absolute value.

REFERENCES:
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patent: 5679269 (1997-10-01), Cohen et al.
patent: 5900290 (1999-05-01), Yang et al.
"Low-K Fluorinated Amorphous Carbon Interlayer Technology for Quarter Micron Devices", by Matsubara, Y. et al., IEEE, IEDM 96, pp. 369-372 (1996).
"Novel Low-K Dielectrics Based on DLC Materials", by Grill, A. et al., Materials Science, RC 20878 (92467), pp. 1-9 (Jun. 4, 1997).
"Diamondlike Carbon Materials as Low-K Dielectrics for Multilevel Interconnects in ULSI", by Grill, A. et al., Mat. Res. Soc. Symp. Proc,, vol. 443, pp. 155-164 (1997).
"Fluorinated Amorphous Carbon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition for Low Dielectric Constant Interlayer Dielectrics", by Endo, K. et al., App. Phys. of Japan, 78(2),1 pp. 1370-1372 (Ju.. 15, 1995).
"Preparation of Fluorinated Amorphous Carbon (a-C:F) by Magnetron Sputtering", by Amano T. et al., Appl. Phys. of Japan, 58th conf. on Applied Physics of Japan (Oct. 2-5, 1997).

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