Article comprising complementary circuit with inorganic n-channe

Details Article comprising complementary circuit with inorganic n-channe Article comprising complementary circuit with inorganic n-channe

1996-01-16

1997-04-29

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

257 57, 257 59, 257 69, 257351, H01L 3524

Patent

active

056251998

ABSTRACT:
Complementary circuits with inorganic n-channel thin film transistors (TFTs) and organic p-channel TFTs can exhibit advantageous properties, without being subject to some of the drawbacks of prior art complimentary inorganic TFTs or complementary organic TFTs. In preferred embodiments of the invention, the n-channel inorganic TFTs have an amorphous Si active layer, and the p-channel organic TFTs have .DELTA.-hexathienylene (.alpha.-6T) active layer. Complementary inverters according to the invention are disclosed, as is an exemplary processing sequence that can be used to manufacture integrated complementary inverters and other complementary circuits according to the invention.

REFERENCES:
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patent: 5442198 (1995-08-01), Arai et al.
"Logic Gates Made from Polymer Transistors and Their Use in Ring Oscillators", by A. R. Brown et al., Science, vol. 270, p. 972, Nov. 1995.
"Organic Transistors: Two-Dimensional Transport and Improved Electrical Characteristics", by A. Dodabalapur et al., Science, vol. 268, p. 270, 14 Apr. 1995.
"Synthesis and Superior Transistor Performance of Dopant-Free Thiophene Hexamers", by H. E. Katz et al., Proceedings of the PMSE Division of the American Chemical Society, vol. 72, p. 467 (1995).
"Organic Heterostructure Field-Effect Transistors", by A. Dodabalapur et al., Science, vol. 269, p. 1560, Sep. 1995.
Horowitz et al., "Thin Film Transistors Based on Alpha-Conjugated Oligomers", Synthetic Metals, 41-43, 1991.

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