Article comprising an organic thin film transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

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257 40, 257289, 257403, 257642, H01L 2976, H01L 31036, H01L 31112

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active

055962084

ABSTRACT:
Articles according to the invention comprise an improved organic thin film transistor (TFT) that can have substantially higher source/drain current on/off ratio than conventional organic TFTs. An exemplary TFT according to the invention comprises, in addition to a p-type first organic material layer (e.g., .alpha.-6T), an n-type second organic material layer (e.g., Alq) in contact with the first material layer. TFTs according to the invention can be advantageously used in, for instance, active liquid crystal displays and electronic memories.

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patent: 5335235 (1994-08-01), Nishizawa et al.
patent: 5350459 (1994-09-01), Suzuki et al.
patent: 5525811 (1996-07-01), Sakurai et al.

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