Article comprising an improved quantum cascade laser

Details Article comprising an improved quantum cascade laser Article comprising an improved quantum cascade laser

1996-03-20

1998-03-10

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 43, H01S 319, H01S 318

Patent

active

057270104

ABSTRACT:
The disclosed improved quantum cascade (QC) laser comprises features that facilitate lasing at temperatures above 260 K, preferably above 300 K. Among the features is a wavefunction-increasing feature that enhances the amplitude of the lasing level wavefunction in the adjacent upstream barrier layer, thereby increasing carrier injection efficiency into the lasing level. Exemplarily, the wavefunction-increasing feature is an approximately disposed thin quantum well. Among the features typically is also a chirped superlattice in the injection/relaxation region that acts as a Bragg reflector to suppress escape of carriers from the lasing level in the continuum, while facilitating carrier extraction from the ground state into a miniband, with the energy width of the miniband decreasing over at least a portion of the thickness of the injection/relaxation region.

REFERENCES:
patent: 5457709 (1995-10-01), Capasso et al.
Faist et al, "Quantum Cascade Laser: An Intersub-band Semiconductor Laser Operating Above Liquid Nitrogen Temperature", Electronics Letters, vol. 30, No. 11, pp. 865-866, May 1994.

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