Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Patent
1994-12-09
1996-11-12
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
257289, 257347, 257410, 257642, H01L 3524, H01L 5100, H01L 2976, H01L 2701
Patent
active
055742912
ABSTRACT:
Organic thin film transistors having improved properties (e.g., on/off ratio>10.sup.5 at 20.degree. C.) are disclosed. The improved transistors comprise an organic active layer of low conductivity (<5.times.10.sup.-8 S/cm at 20.degree. C., preferably less than 10.sup.-8 or even 10.sup.-9 S/cm). A method of producing such materials is disclosed. Rapid thermal annealing was found to have beneficial results. An exemplary and preferred material is .alpha.-hexathienylene (.alpha.-6T). The improved transistors are expected to find use for, e.g., active liquid crystal displays and for memories.
REFERENCES:
patent: 5247190 (1993-09-01), Friend et al.
patent: 5315129 (1991-05-01), Forrest et al.
patent: 5355235 (1994-10-01), Nishizawa et al.
"All-Polymer Field-Effect Transistor Realized by Printing Techniques", by F. Garnier et al., Science, vol. 265, 16 Sep. 1994, pp. 1684-1686.
"Polythiophene Field-Effect Transistor With Polypyrrole Worked as Source and Drain Electrodes", by H. Koezuka et al., Appl. Phys. Lett., vol. 62(15), 12 Apr. 1993, pp. 1794-1796.
"Polythienylenevinylene Thin-Film Transistor with High Carrier Mobility", by H. Fuchigami et al., Appl. Phys. Lett., vol. 63(10), 6 Sep. 1993, pp. 1372-1374.
"An Analytical Model for Organic-Based Thin-Film Transistors", by G. Horowitz et al., J. Appl. Phys., vol. 70(1), 1 Jul. 1991, pp. 469-475.
"Thin-Film Transistors Based on Alpha-Conjugated Oligomers", by G. Horowitz et al., Synthetic Metals, vol. 41-43 (1991), pp. 1127-1130. no month.
"Junction Field-Effect Transistor Using Polythiophene as an Active Component", by S. Miyauchi et al., Synthetic Metals., vol. 41-43 (1991), pp. 1155-1158. no month.
Chemical Abstracts, vol. 114, p. 22, item 186387g (1991). no month.
"X-Ray Determination of the Crystal Structure and Orientation of Vacuum Evaporated Sexithiophene Films", by B. Servet et al., Advanced Materials, vol. 5, No. 6, p. 461 (1993). no month.
"Polymorphism and Charge Transport in Vacuum-Evaporated Sexithiophene Films", by B. Servet et al., Chemistry of Materials, vol. 6, (1994), p. 1809. no month.
"Amorphous and Microcrystalline Devices", J. Kanicki, editor, Artech House, Boston (1991) pp. 102-103. no month.
Dodabalapur Ananth
Katz Howard E.
Torsi Luisa
Lucent Technologies - Inc.
Pacher Eugen E.
Saadat Mahshid
LandOfFree
Article comprising a thin film transistor with low conductivity does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Article comprising a thin film transistor with low conductivity , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Article comprising a thin film transistor with low conductivity will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-564817