Article comprising a strained layer quantum well laser

Details Article comprising a strained layer quantum well laser Article comprising a strained layer quantum well laser

1991-11-27

1993-05-18

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

052127044

ABSTRACT:
A GaAs-based self-aligned laser with emission wavelength in the approximate wavelength regime 0.87-1.1 .mu.m is disclosed. The laser is a strained layer QW laser and is readily manufacturable. Preferred embodiments of the inventive laser do not comprise Al-containing semiconductor alloy. Lasers according to the invention can for instance be used advantageously as 0.98 .mu.m pump sources for Er-doped fiber amplifiers.

REFERENCES:
patent: 4881235 (1989-11-01), Chinone et al.
"High-Power 0.98 .mu.m GaInAs Strained Quantum Well Lasers for Er.sup.3+ -Doped Fibre Amplifier", by M. Okayasu et al., Electronics Letters, vol. 25, No. 23, Nov. 9, 1989, pp. 1563-1564.
"InGaAs/AlGaAs Strained Single Quantum Well Diode Lasers With Extremely Low Threshold Current Density And High Efficiency", by H. K. Choi et al., Applied Physics Letters, vol. 57 (4), Jul. 23, 1990, pp. 321-323.
"AlGaAs/GaAs Self-Aligned LD's Fabricated by the Process Containing Vapor Phase Etching and Subsequent MOVPE Regrowth", by M. Nido et al., IEEE Journal of Quantum Electronics, vol. QE-23, No. 6, Jun. 1987, pp. 720-724.
"Single-Longitudinal-Mode Selfaligned (AlGa)As Double-Heterostructure Lasers Fabricated by Molecular Beam Epitaxy", by H. Tanaka et al., Japanese Journal of Applied Physics, vol. 24, No. 2, Feb. 1985, pp. L89-L90.
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"GaInP Mass Transport and GaInP/GaAs Buried-Heterostructure Lasers", by S. H. Groves et al., Applied Physics Letters, vol. 56(4), Jan. 22, 1990, pp. 312-314.
"High Power CW Operation of Aluminum-Free InGaAs/GaAs/InGaP Strained Layer Single Quantum Well Ridge Waveguide Lasers", by T. Ijichi et al., Furukawa Electric Corporation, Yokohama 220, Japan, pp. 44-45.
"Transverse-Mode Stabilized GaAlAs Laser With an Embedded Confining Layer on Optical Guide by MOCVD", by M. Okajima et al., Toshiba Research and Development Center, Toshiba Corp., Kawasaki 210, Japan, 1983 IEEE, pp. 292-295.
"Self-aligned Structure InGaAsP/InP DH Lasers", by H. Nishi et al., Applied Physics Letters, vol. 35(3), Aug. 1, 1979, pp. 232-234.
"Long-Term 60 mW Operation of 780 nm AlGaAs Lasers With Extended Beam by Additional Low-Al-Content Layer in p-Type Cladding Layer", by S. Nakatsuka, Electronic Letters, vol. 27, No. 11, May 23, 1991, pp. 900-902.

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