Coherent light generators – Particular active media – Semiconductor
Patent
1995-05-12
1996-07-23
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
055397620
ABSTRACT:
A novel InP-based semiconductor laser comprises an unpatterned active region that is essentially co-extensive with the substrate of the laser, an electron stopper layer, and a separate confinement heterostructure (SCH) layer that has a portion of thickness greater than the thickness of the remainder of the SCH layer. The difference in thickness serves to provide lateral guiding of the laser mode. A patterned current blocking layer is disposed on the SCH layer, with a window in the blocking layer defining the region of increased thickness of the SCH layer. The inventive laser is readily manufacturable and can have improved properties.
REFERENCES:
patent: 5003548 (1991-03-01), Boun et al.
patent: 5448585 (1995-05-01), Belenky et al.
patent: 5465263 (1995-11-01), Bour et al.
"Growth and Characterization of High Yield, Reliable, High-Power, High-Speed, InP/InGaAsP Capped Mesa Buried Heterostructure Distributed Feedback (CMBH-DFB) Lasers", by J. L. Zilko et al, IEEE Journal of Quantum Electronics, vol. 25, No. 10, Oct. 1989, pp. 2091-2095.
"Building Better Diode Lasers", by H. Tanaka, Laser Optics & Optronics, Aug. 1991, pp. 30-34.
Belenky Gregory
Kojima Keisuke
Kzarinov Rudolf F.
Reynolds, Jr. Claude L.
AT&T Corp.
Davie James W.
Pacher Eugen E.
LandOfFree
Article comprising a semiconductor laser with carrier stopper la does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Article comprising a semiconductor laser with carrier stopper la, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Article comprising a semiconductor laser with carrier stopper la will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-719618