Article comprising a semiconductor laser that is non-degenerate

Details Article comprising a semiconductor laser that is non-degenerate Article comprising a semiconductor laser that is non-degenerate

1994-01-05

1995-02-14

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 27, H01S 319

Patent

active

053902092

ABSTRACT:
The output of vertical cavity surface emitting layers (VC-SELs) generally lacks polarization stability due to polarization mode degeneracity. I have discovered that in the usual (001) laser geometry polarization mode degeneracity can be removed if the active region of the laser is selected such that the active region lacks mirror symmetry with respect to any plane normal to the [001] crystal direction. Exemplarily, the active region comprises one or more asymmetrical quantum wells, e.g., quantum wells having a saw-tooth profile. The invention can also be embodied in edge emitting lasers, but embodiment in VC-SELs is preferred.

REFERENCES:
patent: 4949350 (1990-08-01), Jewell et al.
patent: 4980892 (1990-12-01), Cunningham et al.
patent: 4982408 (1991-01-01), Shimizu
"Performance of Gain-Guided Surface Emitting Lasers with Semiconductor Distributed Bragg Reflectors", by G. Hasnain et al., IEEE Journal of Quantum Electronics, vol. 27, No. 6, Jun. 1991, pp. 1377-1385.
"Top-suface Emitting Lasers with 1.9 V Threshold Voltage and the Effect of Spatial Hole Burning on their Transverse Mode Operation and Efficiencies", by D. Vakhshoori et al., Applied Physics Letters, vol. 62(13), Mar. 29, 1993, pp. 1448-1450.
"Engineered Polarization Cointrol of GaAs/AlGaAs Surface-Emitting Lasers by Anisotropic Stress and Elliptical Etched Substrate Hole", by T. Mukaihara et al., IEEE Photonics Technology Letters, vol. 5, No. 2, Feb. 1993, pp. 133-135.
"CTuN1 Transverse-Mode Engineering in Vertical Cavity-Surface Emitting Lasers", by K. D. Choquette et al., Conference on Lasers and Electro-Optics (IEEE/OSA, Baltimore, Md. 1993), p. 148.

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