Article comprising a real space transfer semiconductor device, a

Details Article comprising a real space transfer semiconductor device, a Article comprising a real space transfer semiconductor device, a

1992-02-28

1994-05-03

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257 13, 257 96, 257192, 257252, H01L 29161, H01L 2980

Patent

active

053090039

ABSTRACT:
Real space transfer (RST) semiconductor devices of novel geometry are disclosed. The devices are processed such that, at least in the active region of the devices, bulk semiconductor material is removed, and such that both the channel length L.sub.ch and the collector width W are defined lithographically. The channel length is defined by a trench etched through a highly conductive emitter contact layer. The trench is situated directly opposite the collector. Devices according to the invention can have relatively small parasitic capacitance, and therefore are potentially fast. A processing method that can be used to make devices of the novel geometry is also disclosed.

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