Article comprising a quantum well laser

Details Article comprising a quantum well laser Article comprising a quantum well laser

1994-06-29

1995-09-05

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

054485851

ABSTRACT:
The quantum well lasers according to the invention comprise an electron stopper layer that provides a barrier for the flow of electrons from the active region to the p-side waveguide and cladding layers and in preferred embodiments also comprise a hole stopper layer that provides a barrier for the flow of holes from the active region to the n-side waveguide and cladding layers. An exemplary InP-based laser according to the invention comprises AlInGaAs quantum well layers and barrier layers, and an AlInAs electron stopper layer and an InP hole stopper layer. Lasers according to the invention can have relatively low temperature dependence of, e.g., threshold current and/or external quantum efficiency, and may be advantageously incorporated in, e.g., optical fiber communication systems.

REFERENCES:
patent: 5331655 (1994-07-01), Harder et al.
"High-performance Uncooled 1.3-.mu.m Al.sub.x Ga.sub.y In.sub.1-x-y As/InP Strained-Layer Quantum-well Lasers for Fiber-in-the-loop Applications", by C. E. Zah et al., OFC 94 Technical Digest, vol. 4, p. 204. (No month).
"1.3 .mu. Decoupled Confinement Heterostructure Lasers Grown by Chemical Beam Epitaxy", by S. Hausser et al., Applied Physics Letters, vol. 62(7), p. 663., Feb. 15, 1993.

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