Article comprising a high value resistor

Details Article comprising a high value resistor Article comprising a high value resistor

1990-06-19

1992-08-18

Lateef, Marvin M.

Electrical resistors

With base extending along resistance element

Resistance element coated on base

357 51, 357 6, H01C 1012

Patent

active

051402998

ABSTRACT:
In an electronic circuit that normally includes a high-value resistor, the resistive function may be usefully provided by a thin dielectric layer. Electric current is transported through the layer by quantum tunneling. In one embodiment, a resistor useful for VLSI applications is provided, requiring only a single contact window.

REFERENCES:
patent: 3568010 (1971-03-01), Maserjian
patent: 3983264 (1976-09-01), Schroen et al.
patent: 4926232 (1990-05-01), Ando et al.
patent: 4975750 (1990-12-01), Hayashi et al.
VLSI Technology, McGraw-Hill Book Company, New York, NY, 1983, by S. M. Sze, pp. 474-475.
Journal Of Applied Physics, vol. 40, No. 1, Jan., 1969, "Fowler-Nordheim Tunneling into Thermally Grown SiO.sub.2 ", by M. Lenzlinger et al., p. 278.
The Theory of Electrical Conduction and Breadkown in Solid Dielectrics, Clarendon Press, Oxford University, 1973 by J. J. O'Dwyer, pp. 136-137.
The Bell System Technical Journal, vol. 62, No. 4, Apr. 1983, "A Lithographic Mask System for MOS Fine-Line Process Development", by J. M. Andrews, pp. 1107-1125.

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