Article comprising a bipolar transistor with floating base

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor

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Details

257566, 257586, H01L 2924, H01L 29161

Patent

active

054612454

ABSTRACT:
The novel bipolar transistor has at least two separated emitter contacts and no base contact, and the emitter/base p-n junction has backward diode characteristics. The transistor can function as a logic device, but can also function as an amplifying device in digital or analog circuits.

REFERENCES:
patent: 4999687 (1991-03-01), Luryi et al.
patent: 5006912 (1991-04-01), Smith et al.
patent: 5315135 (1994-05-01), Ueda
"Charge Injection Logic", by S. Luryi, Applied Physics Letters, 57 (17), 22 Oct. 1990, pp. 1787-1789.

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