Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-11-25
1994-04-19
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 27, 257 29, 257197, 257198, H01L 2970
Patent
active
053048164
ABSTRACT:
The disclosed heterojunction bipolar transistor, to be referred to as the "coherent" transistor (CT), is capable of providing gain above the conventionally defined cut-off frequencies f.sub.T and f.sub.max. Substantially, mono-energetic (average energy .DELTA.) carriers are injected in beam-like fashion into the base, with kT<.DELTA.<hv.sub.opt, where k, T and h have their conventional meaning, and v.sub.opt is the frequency of the lowest relevant optical phonon in the base of width W.sub.B. Exemplarily, W.sub.B is about 100 nm, .DELTA. is about 20 meV, the CT comprises Si.sub.1-x Ge.sub.x or III/V material, with the base being doped n-type. The CT utilizes substantially collisionless minority carrier transport through the base, and is designed such that, at an operating temperature which typically is .ltorsim.77K, the variance of the average base transit time (.DELTA..tau..sub.B) is much less than the base transit time .tau..sub.B, typically less than 0.5 .tau..sub.B, preferably about .tau..sub.B /5 or less. Transistors according to the invention typically will have an operating frequency in the range 100 GHz-1THz, and can be advantageously used in many areas of technology, e.g., high speed computing or communications.
REFERENCES:
patent: 4829343 (1989-05-01), Levi
patent: 4866488, Frensley
patent: 4958208 (1990-09-01), Tanaka
patent: 5006912 (1991-04-01), Smith et al.
patent: 5198689 (1993-03-01), Fujioka
patent: 5206524 (1993-04-01), Chen et al.
Chen et al., "Subpicosecond InP/InGaAs Heterostructure Bipolar Transistors," IEEE Electron Device Letters, vol. 10, No. 6, Jun. '89, pp. 267-269.
Tiwari, "Frequency Dependence of the Unilateral Gain in Bipolar Transistors," IEEE Electron Device Letters, vol. 10, No. 12, Dec. 1989, pp. 574-576.
Dagli, "A Unipolar Transistor with Negative Output Resistance," Solid-State Electronics, vol. 33, No. 7, 1990, pp. 831-836.
Wright, "Small-Signal Theory of the Transistor Transit-Time Oscillator (Translator)," Solid-State Electronics, vol.22, 1979, pp. 399-403.
Burghartz et al., "Self-Aligned SiGe-Base Heterojunction Bipolar Transistor by Selective Epitaxy Emitter Window (SEEW) Technology", IEEE Electron Device Letters, vol. 11, No. 7, Jul. 1990, pp. 288-289.
S. M. Sze, "Physics of Semiconductor Devices", 2nd Ed., John Wiley & Sons, 1981, Chapter 3.
G. T. Wright, "Small-Signal Theory of the Transistor Transistor Transit-Time Oscillator (Translator)", Solid State Electronics, vol. 22, pp. 399-403, 1979.
S. Tiwari, "Frequency Dependence of the Unilateral Gain in Bipolar Transistors", IEEE Electron Device Letters, vol. 10, p. 574, 1989.
Y. K. Chen, et al., "Subpicosend InP/InGaAs Heterostructure Bipolar Transistors", IEEE Electron Device Letters, EDL-10, No. 6, p. 267, 1989.
N. Dagli, "A Unipolar Transistor With Negative Output Resistance", Solid State Electronics, vol. 33, No. 7, pp. 831-836, 1990.
A. A. Grinberg, et al., "Ballistic Versus Diffusive Base Transport in the High-Frequency Characteristics of Bipolar Transistors", Applied Physics Letters, vol. 60, pp. 2270-2272, 1992.
Grinberg Anatoly A.
Luryi Serge
AT&T Bell Laboratories
Mintel William
Pacher Eugen E.
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