Fishing – trapping – and vermin destroying
Patent
1989-06-02
1990-04-24
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437225, 437228, 437231, 437235, 437980, 427 96, 4271262, 357 72, 357 73, H01L 2100, H01L 2102, H01L 21302, B05D 512
Patent
active
049200780
ABSTRACT:
A method of passivating GaAs and InGaAs by growing on the GaAs or InGaAs used for semiconducting devices a surface film of glassy As.sub.2 S.sub.3 which acts as a passivating layer. The film growth is preferably done by precipitating As.sub.2 S.sub.3 from a solution containing NH.sub.4 OH, so as to make it basic, and then annealing the precipitated film at a temperature between the glass transition temperature (200.degree. C.) and the melting point (315.degree. C.) of As.sub.2 S.sub.3.
REFERENCES:
patent: 4026741 (1977-05-01), Chang et al.
patent: 4095011 (1978-06-01), Hawrylo
patent: 4439464 (1984-03-01), Lauks
patent: 4447469 (1984-05-01), Peters
patent: 4560576 (1985-12-01), Lewis et al.
patent: 4751200 (1988-06-01), Gmitter
patent: 4751201 (1988-06-01), Nottenburg
"Nearly Ideal Electronic Properties of Sulfide Coated GaAs Surfaces," Applied Physics Letters, E. Yablonovitch et al., 1987, vol. 51, No. 6, pp. 439-441.
"Electronic Passivation of GaAs Surfaces Through the Formation of Arsenic-Sulfur Bonds," Applied Physics Letters, C. J. Sandroff et al., 1989, vol. 54, No. 4, pp. 362-364.
"Influence of the Substrate on the Electrical Properties of As.sub.2 S.sub.3 Films", Soviet Physics Semiconductors, 1985, Y. G. Fariver et al., vol. 19, No. 7, pp. 795-797.
"Monocrystalline Aluminum Ohmic Contact to n-GaAs by H.sub.2 S Adsorption," Applied Physics Letters, J. Massies et al., 1981, vol. 38, No. 9, pp. 693-695.
"Effects of H.sub.2 S Adsorption on Surface Properties of GaAs {100} Grown In Situ by MBE," Journal of Vacuum Science Technology, J. Massies et al., 1980, vol. 17, No. 5, pp. 1134-1140.
"Effects of Cations on the Performance of the Photoanode in the n-GaAs/K.sub.2 Se-KOH/C Semiconductor Liquid Junction Solar Cell," Journal of the Electrochemical Society, B. A. Parkinson et al., 1979, vol. 126, No. 6, pp. 954-960.
"Advances in SQUID Magnetometers," IEEE Transactions on Electron Devices, J. Clarke, 1980, vol. ED-27, No. 10, pp. 1896-1908.
"Surface Passivation of GaAs," Applied Physics Letters, H. H. Lee et al., 1989, vol. 54, No. 8, pp. 724-726.
Colclaser, R., Microelectronics: Processing and Device Design, Wiley & Sons, 1980, p. 81.
Bagley Brian G.
Gmitter Thomas J.
Yablonovitch Eli
Bell Communications Research Inc.
Everhart B.
Falk James W.
Guenzer Charles S.
Hearn Brian E.
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