Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2006-10-03
2006-10-03
Fahmy, Wael (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C438S039000
Reexamination Certificate
active
07115913
ABSTRACT:
A TFT array substrate used for a display device and a method of making the same are disclosed. A optically transparent thick resin insulation film5is formed on a base substrate and an upper contact hole51is perforated through the optically transparent thick resin insulation film5. A lower contact hole41perforated through a gate insulation film15and patterning of an ITO film to make a transparent pixel electrode are then collectively carried out under a photoresist pattern8. Where the photoresist pattern8is provided after making the ITO film, an aperture81is perforated closer to the center of the upper contact hole51at an end portion of a connecting line14afor a pad and is smaller in diameter by a side etching size plus a margin than the upper contact hole. Subsequently, following three-etching steps are carried out: (1) patterning of the ITO film along the photoresist pattern8, (2) the lower contact hole41is made by using buffered hydrofluoric acid solution, and (3) an “eaves” portion6aof the ITO films is removed.
REFERENCES:
patent: 6351010 (2002-02-01), Yamanaka et al.
Fahmy Wael
Harrison Monica D.
TFPD Corporation
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