Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-04-12
2011-04-12
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE33053, C438S034000, C349S139000, C349S142000
Reexamination Certificate
active
07923734
ABSTRACT:
An array substrate comprising a base substrate, a common electrode, a gate line, a data line, a thin film transistor, a passivation layer and a pixel electrode of “” shape. The thin film transistor comprises a gate electrode, an active layer, a source electrode and a drain electrode; the gate electrode is connected with the gate line; the source electrode is connected with the data line; and the drain electrode is connected with the pixel electrode. A passivation layer is formed on the source electrode, the drain electrode and the data line, and a via hole is formed in the passivation layer over the drain electrode. The pixel electrode of “” shape is formed on the passivation layer and connected with the drain electrode through the via hole in the passivation layer. The data line is provided below the position corresponding to the boundary between the “/” portion and the “\” portion of the pixel electrode of “” shape. The array substrate increases the transmittivity of pixel and improves the display quality.
REFERENCES:
patent: 2006/0176434 (2006-08-01), Kim et al.
Beijing Boe Optoelectronics Technology Co., Ltd.
Bryant Kiesha R
Ladas & Parry LLP
Wright Tucker
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