Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2011-08-02
2011-08-02
Ngo, Ngan (Department: 2893)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S022000, C438S496000, C438S758000, C438S287000, C438S591000, C257SE21625, C257SE51006, C257SE21409
Reexamination Certificate
active
07989242
ABSTRACT:
An array substrate for a liquid crystal display device includes: a gate line and a gate electrode on a substrate, the gate electrode connected to the gate line; a gate insulating layer on the gate line and the gate electrode, the gate insulating layer including an organic insulating material such that a radical of carbon chain has a composition ratio of about 8% to about 11% by weight; a semiconductor layer on the gate insulating layer over the gate electrode; a data line crossing the gate line to define a pixel region; source and drain electrodes on the semiconductor layer, the source electrode connected to the data line and the drain electrode spaced apart from the source electrode; a passivation layer on the data line, the source electrode and the drain electrode, the passivation layer having a drain contact hole exposing the drain electrode; and a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the drain contact hole.
REFERENCES:
patent: 7309907 (2007-12-01), De Jongh et al.
patent: 2007/0236623 (2007-10-01), Heo et al.
patent: 2008/0050852 (2008-02-01), Hwang et al.
Chae Gee-Sung
Heo Jae-Seok
Jun Woong-Gi
Kim Byung-Geol
LG Display Co. Ltd.
Liu Benjamin Tzu-Hung
Morgan & Lewis & Bockius, LLP
Ngo Ngan
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