Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-03-15
2008-09-02
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S228000, C257SE29283, C257SE29295
Reexamination Certificate
active
07420214
ABSTRACT:
An array substrate for a display device includes an insulating substrate, a buffer layer which is disposed on the insulating substrate and is formed of silicon oxide with a refractive index equal to a refractive index of the insulating substrate, a first insulation layer which is disposed on the buffer layer and formed of silicon nitride, a second insulation layer which is disposed on the first insulation layer and formed of silicon oxide, a switching element including a semiconductor layer disposed on the second insulation layer, and a pixel electrode connected to the switching element.
REFERENCES:
patent: 7132789 (2006-11-01), Kobayashi
patent: 11-163353 (1999-06-01), None
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Ho Tu-Tu V
Toshiba Matsushita Display Technology Co., Ltd.
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