Array substrate and method thereof for liquid crystal...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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C438S149000, C438S151000

Reexamination Certificate

active

07041521

ABSTRACT:
An array substrate of the present invention includes a storage capacitor that has a storage-on-gate structure. One embodiment of the present invention discloses the array substrate having a metal island pattern on the substrate beneath a drain electrode. The metal island pattern is disposed beneath a drain contact hole through which a pixel electrode contacts the drain electrode. Since the metal island pattern has the same thickness as the gate line, the passivation layer can have the same height both in a drain region and in a storage region. Over-etching is minimized with the passivation layer in the drain and storage region having the same uniform thickness.

REFERENCES:
patent: 6281552 (2001-08-01), Kawasaki et al.
patent: 6362032 (2002-03-01), Kim et al.
patent: 6686228 (2004-02-01), Suzawa et al.
patent: 6746887 (2004-06-01), Moon et al.
patent: 6900462 (2005-05-01), Suzawa et al.
patent: 6937314 (2005-08-01), Kim
patent: 04-307521 (1992-10-01), None

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