Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-05-09
2006-05-09
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S149000, C438S151000
Reexamination Certificate
active
07041521
ABSTRACT:
An array substrate of the present invention includes a storage capacitor that has a storage-on-gate structure. One embodiment of the present invention discloses the array substrate having a metal island pattern on the substrate beneath a drain electrode. The metal island pattern is disposed beneath a drain contact hole through which a pixel electrode contacts the drain electrode. Since the metal island pattern has the same thickness as the gate line, the passivation layer can have the same height both in a drain region and in a storage region. Over-etching is minimized with the passivation layer in the drain and storage region having the same uniform thickness.
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patent: 04-307521 (1992-10-01), None
Kwak Dong-Yeung
Sohn Se-Il
Song Sang-Moo
LG.Philips LCD Co. , Ltd.
McKenna Long & Aldridge LLP
Picardat Kevin M.
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