Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-03-22
2011-03-22
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE21414, C349S048000, C349S049000, C349S050000, C345S090000, C345S091000, C345S092000
Reexamination Certificate
active
07910925
ABSTRACT:
The present invention provides an array substrate and a method for manufacturing the same. The array substrate comprises a substrate and a plurality of gate lines parallel to each other and a plurality of data lines parallel to each other formed on the substrate, the gate lines intersecting the data lines to define a plurality of pixel region arranged in a matrix, each pixel region comprising a thin film transistor, a pixel electrode and a thin film diode. With respect to each pixel region in a row, the pixel electrode is connected with the gate line in the present row through the thin film transistor and is connected with the gate line in a previous row through the thin film diode.
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Beijing Boe Optoelectronics Technology Co., Ltd.
Gurley Lynne A
Kearney Naima J
Ladas & Parry LLP
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