Array spreading resistance probe (ASRP) method for profile extra

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148DIG162, 148DIG135, 324715, H01L 2166

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052179079

ABSTRACT:
A method of extracting an impurity profile from a diced semiconductor chip having cellular construction. The cells are arranged in a matrix the columns and rows of which have a defined column pitch a.sub.x and a defined row spacing a.sub.y. In accordance with the method, the diced chip is bevelled from its original surface to expose the cells. The two probes of a Spreading Resistance Profile (SRP) device are then placed in contact with the dopant regions of two cells in the same row of the matrix, the distance .DELTA.X between the probes being ma.sub.x, where m is an integer, and the total resistance R.sub.T between the probes is measured. The SRP device is then stepped through a plurality of rows in the matrix, contacting cells in the same two columns as in the case of the first measurement, thereby interactively generating a plurality of total resistance R.sub.T measurements. The total resistance R.sub.T measurements are then combined to obtain the doping profile of the dopant region.

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