Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2011-01-18
2011-01-18
Mulpuri, Savitri (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S005000, C257SE27055, C257SE27076, C257SE29030, C257SE29033, C257SE29034, C257SE29114, C257SE21608, C257SE45002, C438S309000, C438S318000, C438S315000, C438S353000, C438S355000, C438S359000
Reexamination Certificate
active
07872326
ABSTRACT:
A process for manufacturing an array of bipolar transistors, wherein deep field insulation regions of dielectric material are formed in a semiconductor body, thereby defining a plurality of active areas, insulated from each other and a plurality of bipolar transistors are formed in each active area. In particular, in each active area, a first conduction region is formed at a distance from the surface of the semiconductor body; a control region is formed on the first conduction region; and, in each control region, at least two second conduction regions and at least one control contact region are formed. The control contact region is interposed between the second conduction regions and at least two surface field insulation regions are thermally grown in each active area between the control contact region and the second conduction regions.
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Benvenuti Augusto
Magistretti Michele
Pellizzer Fabio
Abdelaziez Yasser A
Iannucci Robert
Jorgenson Lisa K.
Mulpuri Savitri
Seed IP Law Group PLLC
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