Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1996-01-02
1999-04-27
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 98, 257432, 257460, H01L 3300
Patent
active
058981918
ABSTRACT:
An optical integrated device having an even height such that it can be easily arrayed or integrated with other devices in a single substrate. The device includes a semi-conductor substrate having a substrate-side electrode which is formed on one side of the semi-conductor substrate. A micro-lens layer is epitaxially grown on the opposite side to where the substrate-side electrode is formed. The opposite side also has a hemispherically etched surface. The device also includes epitaxial layers which are grown on a whole area on the micro lens layer and a dielectric film which is formed on the epitaxial layers. Additionally, an epilayer-side electrode is formed on a whole area of the dielectric film.
REFERENCES:
patent: 4339689 (1982-07-01), Yamanaka et al.
Cho, G.S. and Kwon, Y.S., AlGaAs/GaAs Lens-shaped LED with High Efficiency and Narrow Filed Pattern, Optoelectronic Component Technologies, 1813:96-107 (1992).
Hahm, S.H. et al., GaAs/AlGaAs Lensed Light Emitting Diode by the Meltback and Regrowth in Liquid Phase Epitaxy, Jpn. J. of Appl. Phys., 30(5B):910-913 (1991).
Yoo, T.K. et al., Surface/Emitting AlGaAs/GaAs DH LED with Buried-Window Cylindrical Lens, Jpn. J. of Appl. Phys., 27(12):2357-2360 (1988).
Kwon Young-Se
Yang O-Seung
Korea Advanced Institute of Science and Technology
Tran Minh Loan
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