Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Reexamination Certificate
2006-11-14
2006-11-14
Potter, Roy Karl (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
C257S528000, C257S539000, C257S579000
Reexamination Certificate
active
07135756
ABSTRACT:
A cell array is formed by a plurality of cells each including a selection bipolar transistor and a storage component. The cell array is formed in a body including a common collector region of P type; a plurality of base regions of N type, overlying the common collector region; a plurality of emitter regions of P type formed in the base regions; and a plurality of base contact regions of N type and a higher doping level than the base regions, formed in the base regions, wherein each base region is shared by at least two adjacent bipolar transistors.
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U.S. Appl. No. 10/680,721, filed Oct. 7, 2003, Pellizzer et al.
Bez Roberto
Casagrande Giulio
Pellizzer Fabio
Iannucci Robert
Jorgenson Lisa K.
Ovonyx Inc.
Potter Roy Karl
Seed IP Law Group PLLC
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