Arrangement for the reduction of noise in microwave transistors

Details Arrangement for the reduction of noise in microwave transistors Arrangement for the reduction of noise in microwave transistors

1998-09-17

2000-05-30

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

257583, 257592, 257565, H01L 27082, H01L 27102, H01L 2970

Patent

active

060694041

ABSTRACT:
A structure for a microwave device in which the minimum noise figure is reduced in that underneath the base terminal surface of a transistor, a highly-doped trenched layer is formed, which layer is connected to a reference potential in the vicinity of the base terminal surface via a standard collector contact.

REFERENCES:
patent: 5557139 (1996-09-01), Palara
Itoh et al. ("The analysis of silicon bipolar transistor scaling-down scheme for low noise and low power analog application", Bipolar/BiCMOS Circuits and Technology Meeting, 1994, Proceedings of the 1994, 1994, pp. 60-63).
N. Camilleri, et al., IEEE 1994 Microwave and Millimeter-Wave Monolithic Circuits Symposium, Bonding Pad Models for Silicon VLSI Technologies and Their Effects on the Noise Figure of RF NPNs, WEeF-66, pp. 225-228.
M.J. Deen, et al., Canadian Journal of Physics, Modelling of Bonding Pads and Their Effect on the High Frequency Noise Figure of Polysilicon Emitter Bipolar Junction Transistors, In Press 1996.

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