Arrangement for the production of a plasma

Details Arrangement for the production of a plasma Arrangement for the production of a plasma

1990-10-25

1992-04-07

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429831, 20429834, 118723, 156345, H01H 146, C23F 404

Patent

active

051025230

ABSTRACT:
The invention relates to an arrangement for the production of a plasma as well as for applying charged and uncharged particles onto a substrate. Two areal electrodes connected to a voltage source are provided between which a plasma volume excited by high-frequency energy is ignited. The areal ratio of the two electrodes is variable in order to influence the energy of the ions impinging on a substrate. Furthermore, supplying of process gas distributed over the entire substrate area is possible.

REFERENCES:
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J. L. Vossen, J. Electrochem. Soc., vol. 126, No. 2, Feb. 1979, pp. 319-324.
R. A. Morgan, "Plasma Etching in Semiconductor Fabrication", Plasma Technology, 1, Elsevier (1985), pp. 37-40.
S. J. Fonash: Advances in Dry Etching Processes-A Review, Solid State Technology, 1985, pp. 150-158, Figure 2.
Rainer Postl: Plasmaatzen in Drei-Elektroden-Zwei-Frequenzen-Reaktor, Productronic 11, 1987, pp. 95-98.
J. Waldorf, H. Oechsner, H. -J. Fusser: Generation of surface layers and microstructures with a low energy plasma beam source, Thin Solid Films, 174, 1989, pp. 39-44.
Brian Chapman: "Glow Discharge Processes", 1980, Wiley & Sons, pp. 139-163.

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