Arrangement for reducing piezoelectric effects in an electrical

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357 51, 357 55, H01L 2984, H01L 2996, H01L 2702

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active

049639544

ABSTRACT:
An arrangement for reducing piezo-electric effects in piezo-electric effect sensitive electrical components formed in a semiconductor body is disclosed. The piezo-electric effect sensitive component or components are located in a particular zone of the semiconductor body. The semiconductor body is in general mounted on a support. However, the zone of the semiconductor body containing the piezo-electric sensitive component or components is not attached to the support but instead is separated from the support by a space. The presence of the space results in a certain degree of mechanical isolation of the part of the semiconductor body which contains the piezo-electric effect sensitive components, whereby the negative influence of the piezo-electric effect on the long term stability of an instrument utilizing the semiconductor body is reduced.

REFERENCES:
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patent: 4485551 (1984-12-01), Soclof
patent: 4517486 (1985-05-01), Andrews
K. M. Schlesier, S. A. Keneman, R. T. Mooney, "Piezoresistivity Effects in Plastic-Encapsulated Integrated Circuits", 590 RCA Review, vol. 43, Dec. 1982.
Michael Feil et al, "Hybridintegration", Heidelberg Germany, 1986.
Y. Kanda and M. Migitaka, "Effect of Mechanical Stress on the Offset Voltages of Hall Devices in Si 1C", Central Research Lab, Hitachi, Ltd., Japan.
Y. Kanda and M. Migitaka, "Design Consideration for Hall Devices in Si IC", Central Research Lab, Hitachi, Ltd., Japan.

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