Arrangement for providing target material for the generation...

Details Arrangement for providing target material for the generation... Arrangement for providing target material for the generation...

2008-07-29

2008-07-29

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492220, C355S067000, C355S077000

Reexamination Certificate

active

07405413

ABSTRACT:
The invention is directed to an arrangement for providing target material for the generation of short-wavelength electromagnetic radiation, in particular EUV radiation. It is the object of the invention to find a novel possibility for providing target material for the generation of short-wavelength radiation based on an energy beam induced plasma which makes it possible to supply a reproducible successive flow of mass-limited targets in the interaction chamber in such a way that only the amount of target material needed for efficient generation of radiation achieves plasma generation. This object is met, according to the invention, in that the target generator opens into a selection chamber which precedes the interaction chamber and which has, along the target path, an outlet opening into the interaction chamber and in which a target selector is arranged. The target selector has elements for eliminating individual targets needed for the regular target sequence of the target generator, so that only the individual targets needed for efficient plasma generation and radiation generation corresponding to the pulse frequency of the energy beam are admitted to the interaction point.

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Proceedings of SPIE, vol. 4688 (2002) pp. 619-625 “Laser Plasma Radiation Sources based on a Laser-Irradiated Gas Puff Target for X-Ray and EUV Lithography Technologies” Henryk Fiedorowiez, et al.

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