Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of...
Reexamination Certificate
2005-06-28
2005-06-28
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
C438S350000, C438S366000, C257S565000, C257S587000, C257S592000
Reexamination Certificate
active
06911368
ABSTRACT:
In a bipolar double-poly transistor comprising a layer of base silicon (1′) on a silicon substrate (2′), a first layer of silicon dioxide (3′) on the base silicon layer (1′), an emitter window (4′) extending through the first layer (3′) of silicon dioxide and the base silicon layer (1′), a second layer (5′) of silicon dioxide in the emitter window (4′), silicon nitride spacers (6′) on the second layer (5′) of silicon dioxide in the emitter window (4′), and emitter silicon (9′) in the emitter window (4′), an isolating silicon nitride seal is provided to separate the base silicon (1′) from the emitter silicon (9′) to prevent short-circuiting between the base silicon (1′) and the emitter silicon (9′) in the transistor.
REFERENCES:
patent: 6156594 (2000-12-01), Gris
patent: 6323104 (2001-11-01), Trivedi
patent: 6376322 (2002-04-01), Gris
patent: 2001/0012655 (2001-08-01), Nordstrom et al.
patent: 0 949 666 (1999-03-01), None
patent: 06-275633 (1994-09-01), None
patent: 2000269233 (2000-09-01), None
Johansson Ted
Lindgren Anders
Norström Hans
Baker & Botts L.L.P.
Dang Trung
Infineon - Technologies AG
LandOfFree
Arrangement for preventing short-circuiting in a bipolar... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Arrangement for preventing short-circuiting in a bipolar..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Arrangement for preventing short-circuiting in a bipolar... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3460325