Arrangement for growing a thin dielectric layer on a semiconduct

Details Arrangement for growing a thin dielectric layer on a semiconduct Arrangement for growing a thin dielectric layer on a semiconduct

1996-03-25

1999-01-19

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

4272553, 4272554, 427399, 427561, 427579, C23C 1602, C23C 1646, C23C 1622

Patent

active

058611908

ABSTRACT:
A process of growing a dielectric layer includes a step of heating a gas mixture of at least one gas having a first chemical element of oxygen and a second chemical element other than oxygen to a first predetermined temperature to produce reactive precursors of the gas mixture. The reactive precursors are then introduced into a reaction chamber that houses at least one wafer to grow the dielectric layer on the wafer within the reaction chamber at a second predetermined temperature below the first predetermined temperature. A semiconductor manufacturing apparatus of growing the dielectric layer is also described.

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