Coherent light generators – Particular active media – Semiconductor
Patent
1982-06-04
1985-04-23
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
357 17, 357 40, 357 46, 372 46, 372 38, H01S 319
Patent
active
045134235
ABSTRACT:
An arrangement for damping the resonance in a laser diode includes an additional layer (25) which together with the conventional laser diode form a structure (35) of a bipolar transistor. Therein, the additional layer serves as the collector, the cladding layer (12) next to it as the base, and the active region (11) and the other cladding layer (13) as the emitter. A capacitor (30) is connected across the base and the collector. It is chosen so that at any frequency above a certain selected frequency (f.sub.c) which is far below the resonance frequency (f.sub.res) the capacitor impedance is very low, effectively shorting the base to the collector.
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H. Kressel and J. K. Butler, "Semiconductor Lasers and Heterojunction Leds," Academic Press, N.Y. 1977 (Ch. 17).
T. Hong and Y. Suematsu, "Suppression of Resonance-Like Phenomena in the Light Output of Directly Modulated Injection Lasers by .pi.-Type Suppressor Circuit," The Trans. IECE, Japan, E61, pp. 121-124, (1978).
Y. Suematsu and T. Hong, "Suppression of Relaxation Oscillation in Light Output of Injection Lasers by Electrical Resonance Circuit", IEEE J. Quant. Electron, QE-13, pp. 756-762, (1977).
K. Furuya, Y. Suematsu, and T. Hong, "Reduction of Resonance-Like Peak in Direct Modulation Due to Carrier Diffusion in Injection Laser," Applied Optics, 17, pp. 1949-1952, (1978).
N. Chinone, K. Aiki, M. Nakamura, and R. Ito, "Effects of Lateral Mode and Carrier Density Profile on Dynamic Behaviors of Semiconductor Lasers," IEEE J. Quant. Electron, QE-14, pp. 625-631, (1978).
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Katz Joseph
Margalit Shlomo
Yariv Amnon
Davie James W.
Jones Thomas H.
Manning John R.
McCaul Paul F.
The United States of America as represented by the Administrator
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