Arrangement for coating or etching substrates

Details Arrangement for coating or etching substrates Arrangement for coating or etching substrates

1995-03-17

1996-03-12

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723ER, 118723MP, 118733MW, 118723ME, 118729, 156345, C23C 1600, C23F 102

Patent

active

054982910

ABSTRACT:
The invention relates to an arrangement for coating or etching substrates. In this arrangement an HF substrate bias voltage is generated without contact. For this purpose plasma sources are equipped with a bias pot which is disposed at the dark space distance from a substrate carrier and acted upon by HF. Depending on the source used, the bias pot can be constructed as an independent unit or as a component part of the source connected so as to be conducting-for example as an HF magnetron. Via this coupled-in HF power the dc potential on the carrier, and consequently the ion bombardment on the substrate, can be set specifically.

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