Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Patent
1995-10-27
1998-10-06
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
257528, 257532, 257347, 438238, 438239, H01L 2900, H01L 2348, H01L 2352, H01L 2940
Patent
active
058181121
ABSTRACT:
In an arrangement for signal transmission between chip layers of a vertically integrated circuit, a defined, capacitive signal transmission ensues between a part of the vertically integrated circuit in one chip layer and a further part of the vertically integrated circuit in a further chip layer by means of a coupling capacitance. Particularly given high connection densities, a large number of freely placeable and reliable vertical signal connections can be produced directly from the inside of one chip layer to the inside of a neighboring chip layer without extremely high demands being made on the adjustment of the chip layers relative to one another and on the surface planarity of the individual chip layers.
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"The 3D Interconnection-Applications for Mass Memories and Microprocessors", Val et al., Proc. 24th. Symp. on ISHM, 1991, pp. 62-68.
"Future WSI Technology: Stacked Monolithic WSI," Williams et al., IEEE Trans. on CHMT, vol. 16, No. 7, pp. 610,614.
Kleiner Michael
Kuehn Stefan
Thewes Roland
Weber Werner
Clark Jhihan B.
Saadat Mahshid D.
Siemens Aktiengesellschaft
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