Argon recovery from silicon crystal furnace

Details Argon recovery from silicon crystal furnace Argon recovery from silicon crystal furnace

1997-01-17

1998-01-13

Capossela, Ronald C.

Refrigeration

Cryogenic treatment of gas or gas mixture

Separation of gas mixture

62636, 62924, F25J 100

Patent

active

057066744

ABSTRACT:
The present invention is directed to two embodiments of a process for recycling an impure argon effluent from a silicon crystal growing furnace using cryogenics. The first embodiment uses cryogenic distillation techniques, and the second embodiment uses cryogenic adsorption, both of which use catalytic treatments and adsorption in conjunction with their cryogenic process steps to provide a pure argon recycle stream for a silicon crystal growth furnace.

REFERENCES:
patent: 3181306 (1965-05-01), Greist et al.
patent: 3805536 (1974-04-01), Lynn
patent: 5106399 (1992-04-01), Fisher
patent: 5220797 (1993-06-01), Krishnamurthy et al.
"Semiconductor Crystal Growth for the 90s and Beyond" by Peter Disessa, appearing in Semiconductor Fabtech, pp. 133-135.
"The Recovery and Recycling of High Purity Argon in the Semiconductor Industry" by J. V. O'Brien and J. V. Schurter, presented at the AIChE 1988 Spring National Meeting, Mar. 6-10, 1988.

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