Argon purification process

Details Argon purification process Argon purification process

1996-08-30

1998-07-21

Langel, Wayne

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

423219, 423350, C01B 1300, C01B 3302

Patent

active

057831629

ABSTRACT:
An argon recovery and purification process in which the consumption of energy is small because of simple steps, is provided. This process comprises: a first step of reacting impure argon gas with hydrogen gas (H2) so that oxygen (O2) contained in the impure argon gas is converted to water (H2O), thereby substantially removing oxygen (O2) from the impure argon gas; a second step of introducing the impure argon gas into an adsorption unit for adsorbing water (H2O) and carbon dioxide (CO2) contained in the impure argon gas, thereby substantially removing the water (H2O) and carbon dioxide (CO2) from the impure argon gas; and a third step of subjecting the impure argon gas to a low temperature liquefaction and introducing the liquefied argon into a rectification unit for removing low boiling point impurity components and high boiling point impurity components contained in the impure argon gas by purification and separation, thereby obtaining substantially pure argon gas.

REFERENCES:
patent: 4623524 (1986-11-01), Someya et al.
patent: 4762542 (1988-08-01), Mishkovsky et al.
patent: 4859435 (1989-08-01), Roberts et al.
patent: 5441719 (1995-08-01), Nagamura et al.
patent: 5607572 (1997-03-01), Joshi

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