Argon doped epitaxial layers for inhibiting punchthrough within

Details Argon doped epitaxial layers for inhibiting punchthrough within Argon doped epitaxial layers for inhibiting punchthrough within

1998-12-04

1999-12-21

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

257611, 438526, H01L 2936

Patent

active

060052856

ABSTRACT:
A fabrication process and transistor are described in which a transistor having decreased susceptibility to punchthrough and increased resistance to impurity diffusion is formed. One or more argon doped silicon epitaxial layers are formed superjacent a semiconductor substrate. In a preferred dual layer embodiment, a first argon doped silicon epilayer is grown over a substrate, and a second argon doped epilayer, preferably having an argon concentration less than that in the first epilayer, is formed over the first epilayer. A transistor is formed in an active region of a well having a channel laterally bounded by source/drain regions located exclusively in the second epilayer. The lighter argon doping of the second epilayer accommodates current flow in the channel while acting as a barrier to impurity outdiffusion and inhibiting punchthrough. The more heavily doped first epilayer serves primarily as a barrier to outdiffision of impurities from the bulk substrate.

REFERENCES:
patent: 4956693 (1990-09-01), Sawahata et al.
patent: 5384477 (1995-01-01), Bulucea et al.
patent: 5518943 (1996-05-01), Tsunoda
patent: 5723896 (1998-03-01), Yee et al.
patent: 5747371 (1998-05-01), Robb et al.

Affiliated with

Also associated with

Rating

Argon doped epitaxial layers for inhibiting punchthrough within does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Argon doped epitaxial layers for inhibiting punchthrough within , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Argon doped epitaxial layers for inhibiting punchthrough within will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-507739