Area specific temperature control for electrode plates and chuck

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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Details

118723E, 118724, 118725, 118728, 165 801, 165 804, 165 805, H05H 100

Patent

active

058463755

ABSTRACT:
A temperature control system to selectively control the temperature of specific areas of the chuck or electrode plate upon which a wafer is mounted during plasma etching, chemical vapor deposition and other such temperature dependent processes for the purpose of ultimately controlling the temperature of the semiconductor wafer. The temperature control system includes a plurality of conduits arranged about the center of the chuck as a series of concentric radially adjacent loops. Each conduit is connected to its own inlet and outlet to allow a heating or cooling agent to flow independently through each conduit.

REFERENCES:
patent: 4399016 (1983-08-01), Tsukada et al.
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 5192849 (1993-03-01), Moslehi
patent: 5213349 (1993-05-01), Elliott
patent: 5294778 (1994-03-01), Carmen et al.
patent: 5567267 (1996-10-01), Kazama et al.

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