Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1992-09-02
1996-07-23
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257374, 257335, H01L 2900, H01L 2976, H01L 2994, H01L 31062
Patent
active
055392385
ABSTRACT:
A high voltage power transistor cell is developed that provides improved RDSon performance without sacrificing breakdown performance through utilization of trench based transistor technology. A source, drain and trench are formed within a substrate. A gate is formed on the surface over a spacing between the source and the trench. A drift region is formed around the trench. An isolation region may optionally be added allowing electrical isolation between the source and the substrate. The lateral current flow feature allows multiple high voltage power transistors, electrically isolated from one another, to exist on a single semiconductor chip. The drift region formed around the trench provides RESURF transistor characteristics without sacrificing die area.
REFERENCES:
Vankemmel et al, `. . . Corner Effect in Trench-Like Isolated Structures`, IEEE Transon ED, vol. 37 No. 1 Jan. 90, pp. 168-176.
Donaldson Richard L.
Eschweiler Thomas G.
Kesterson James C.
Meier Stephen D.
Texas Instruments Incorporated
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