Static information storage and retrieval – Format or disposition of elements
Reexamination Certificate
2000-08-21
2002-09-03
Elms, Richard (Department: 2824)
Static information storage and retrieval
Format or disposition of elements
C365S063000, C257S666000, C257S672000
Reexamination Certificate
active
06445603
ABSTRACT:
TECHNICAL FIELD OF THE INVENTION
The present invention relates generally to semiconductor met devices, and in particular, the present invention relates to an architecture, package orientation assembly of semiconductor memory devices.
BACKGROUND OF THE INVENTION
Memory devices are typically provided as internal storage areas in the computer. The term memory identifies data storage that comes in the form of integrated circuit chips. There are several different types of memory. One type is RAM (random-access memory). This is typically used as main memory in a computer environment. RAM refers to read and write memory; that is, you can repeatedly write data into RAM and read data from RAM. This is in contrast to ROM (read-only memory), which generally only permits the user in routine operation to read data already stored on the ROM. Most RAM is volatile, which means that it requires a steady flow of electricity to maintain its contents. As soon as the power is turned off, whatever data was in RAM is lost.
Computers almost always contain a small amount of ROM that holds instructions for starting up the computer. Unlike RAM, ROM generally cannot be written to in routine operation. An EEPROM (electrically erasable programmable read-only memory) is a special type of non-volatile ROM that can be erased by exposing it to an electrical charge. Like other types of ROM, EEPROM is traditionally not as fast as RAM. EEPROM comprise a large number of memory cells having electrically isolated gates (floating gates). Data is stored in the memory cells in the form of charge on the floating gates. Charge is transported to or removed from the floating gates by programming and erase operations, respectively.
Yet another type of non-volatile memory is a Flash memory. A Flash memory is a type of EEPROM that can be erased and reprogrammed in blocks instead of one byte at a time. Many modern PCs have their BIOS stored on a flash memory chip so that it can easily be updated if necessary. Such a BIOS is sometimes called a flash BIOS. Flash memory is also popular in modems because it enables the modem manufacturer to support new protocols as they become standardized.
A typical Flash memory comprises a memory array that includes a large number of memory cells arranged in row and column fashion. Each of the memory cells includes a floating gate field-effect transistor capable of holding a charge. The cells are usually grouped into blocks. Each of the cells within a block can be electrically programmed in a random basis by charging the floating gate. The charge can be removed from the floating gate by a block erase operation. The data in a cell is determined by the presence or absence of the charge in the floating gate.
A synchronous DRAM (SDRAM) is a type of DRAM that can run at much higher clock speeds than conventional DRAM memory. SDRAM synchronizes itself with a CPU's bus and is capable of running at 100 MHZ, about three times faster than conventional FPM (Fast Page Mode) RAM, and about twice as fast EDO (Extended Data Output) DRAM and BEDO (Burst Extended Data Output) DRAM. SDRAMs can be accessed quickly, but are volatile. Many computer systems are designed to operate using SDRAM, but would benefit from non-volatile memory.
Many SDRAM devices are housed in packages that have an industry-standard pin layout and are of specified lengths and widths, such as a TSOP (thin, small-outline package) having a width of about 400 mils and a length dependent upon the number of pins. Memory chips in known TSOP memory packages have been oriented lengthwise within the package, as illustrated in
FIG. 1A
, and orthogonally within the package, as illustrated in FIG.
1
B.
FIGS. 1A and 1B
depict industry-standard pin layouts for 44-pin SDRAM TSOP packages.
In the assembly depicted in
FIG. 1A
, memory chip
60
is oriented lengthwise within the package
62
with the major axis of the memory chip
60
extending substantially parallel to the major axis of the package
62
. In the memory chip
60
of
FIG. 1A
, chip bond pads are located at opposite ends of the memory chip
60
. An end will be referred to as opposite another end when the ends are separated by the minor axis. Address chip bond pads
66
are located at a first end of memory chip
60
while data chip bond pads
68
are located at a second end of memory chip
60
. The address chip bond pads
66
are connected to the address pins A
0
-A
10
and BA of the package
62
in a conventional manner. The data chip bond pads
68
are connected to the data pins DQ
0
-DQ
7
in a conventional manner. To simplify the drawings, remaining chip bond pads, such as clock and control signal chip bond pads CLK, CKE, DQM, RAS#, CAS#, WE# and CS#, and power input chip bond pads VCC, VSS, VCCQ and VSSQ, are not labeled in FIG.
1
A.
As shown in
FIG. 1A
, the address chip bond pads
66
of memory chip
60
are located adjacent the address pins A
0
-A
10
near one end
70
of the package
62
, with some of the address pins located at one side
74
of the package
62
and the remaining address pins located at the other, opposite side
76
of the package
62
. A side will be referred to as opposite another side when the sides are separated by the major axis. The data chip bond pads
68
are located adjacent the data pins DQ
0
-DQ
7
near one end
72
of the package
62
, with some of the data pins located at one side
74
of the package
62
and the remaining data pins located at the other, opposite side
76
of the package
62
.
In the assembly depicted in
FIG. 1B
, memory chip
60
is oriented orthogonally within the package
62
with the major axis of the memory chip
60
extending substantially perpendicular to the major axis of the package
62
. In the memory chip
60
of
FIG. 1B
, chip bond pads are located between the banks of memory arrays, or memory banks
64
, located on memory chip
60
. Address chip bond pads
66
are located adjacent a first memory bank
64
0
while data chip bond pads
68
are located a adjacent a second memory bank
64
1
. The address chip bond pads
66
are connected to the address pins A
0
-A
10
and BA of the package
62
in a conventional manner. The data chip bond pads
68
are connected to the data pins DQ
0
-DQ
7
in a conventional manner. To simplify the drawings, remaining chip bond pads, such as clock and control signal chip bond pads CLK, CKE, DQM, RAS#, CAS#, WE# and CS#, and power input chip bond pads VCC, VSS, VCCQ and VSSQ, are not labeled in FIG.
1
B.
As shown in
FIG. 1B
, the address chip bond pads
66
of memory chip
60
are located adjacent the address pins A
0
-A
10
near one end
70
of the package
62
, with some of the address pins located at one side
74
of the package
62
and the remaining address pins located at the other, opposite side
76
of the package
62
. Likewise, the data chip bond pads
68
are located adjacent the data pins DQ
0
-DQ
7
near one end
72
of the package
62
, with some of the data pins located at one side
74
of the package
62
and the remaining data pins located at the other, opposite side
76
of the package
62
.
Undesirable propagation delays may be introduced in a memory assembly between the memory device and the address pins or data pins of the memory package as a result of high RC (resistive/capacitive) time constants between chip bond pads and their associated circuitry. Placement of the chip bond pads thus generally limits placement of the access circuitry. As memory devices become larger, thus containing larger arrays and/or more memory banks, these considerations become more critical.
For the reasons stated above, and for other reasons stated below which will become apparent to those skilled in the art upon reading and understanding the present specification, there is a need in the art for alternate architecture and assembly of semiconductor memory devices.
SUMMARY OF THE INVENTION
The above-mentioned problems with memory devices and other problems are addressed by the present invention and will be understood by reading and studying the following s
Elms Richard
Fogg Slifer Polglaze Leffert & Jay P.A.
Leffert Thomas W.
Micro)n Technology, Inc.
Nguyen Van-Thu
LandOfFree
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