Architecture for virtual ground memory arrays

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C365S185110

Reexamination Certificate

active

11157189

ABSTRACT:
The drain programming window in virtual ground memory arrays may be enlarged by reducing the number of voltage drops in the cell access path. This reduction may be accomplished by reducing the number of transistors in the access path or by otherwise reducing the resistance in the access path.

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patent: 7193901 (2007-03-01), Ruby et al.
patent: 2002/0196698 (2002-12-01), Eitan
patent: 2006/0285386 (2006-12-01), Maayan

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