Static information storage and retrieval – Floating gate – Particular biasing
Patent
1998-07-01
2000-09-19
Nelms, David
Static information storage and retrieval
Floating gate
Particular biasing
365154, 36518508, 36523005, G11C 1606
Patent
active
06122197&
ABSTRACT:
A semiconductor non-volatile memory device is disclosed which is based on the use of Fowler-Nordheim electron tunneling to charge and discharge the isolated gates of the storage cells. The disclosed memory device includes circuitry capable of verifying the threshold level of written storage cells and rewriting only those cells whose threshold is outside a desired threshold range. The disclosed circuit has the further advantage of being able to load data words and verify cell contents simultaneously by utilizing both ends of the bit lines.
REFERENCES:
patent: 5590073 (1996-12-01), Arakawa et al.
patent: 5812451 (1998-09-01), Iwata
patent: 5835414 (1998-11-01), Hung et al.
Sinai Keyhan
Song Paul Jei-Zen
Ho Hoai V.
ISSI/NexFlash Technologies, Inc.
Nelms David
LandOfFree
Architecture and method for performing page write/verify in a fl does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Architecture and method for performing page write/verify in a fl, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Architecture and method for performing page write/verify in a fl will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1079941