Arc heater method for the production of single crystal silicon

Details Arc heater method for the production of single crystal silicon Arc heater method for the production of single crystal silicon

1977-04-14

1978-07-25

Edmundson, F.C.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

423350, 252 623E, B01K 100, C01B 3302, C04B 3500, H01L 300

Patent

active

041027671

ABSTRACT:
A method for the production of single crystal silicon characterized by the steps of feeding into an arc heater a quantity of uncontaminated silicon halide to react with hydrogen or a metal reductant, such as sodium, to produce reaction products including liquid silicon and a gaseous salt of the reductant, depositing the liquid silicon on a downwardly inclined surface, and attaching a single seed crystal of silicon to the liquid silicon and withdrawing the single seed crystal from the liquid silicon so as to propagate a large single crystal.

REFERENCES:
patent: 524173 (1894-08-01), Jacques
patent: 732410 (1903-06-01), Homan
patent: 2904404 (1959-09-01), Ellis
patent: 2955966 (1960-10-01), Sterling
patent: 3325314 (1967-06-01), Allegretti
patent: 3522015 (1970-07-01), Maniero et al.
patent: 3649497 (1972-03-01), Kugler et al.
patent: 3963838 (1976-06-01), Setty et al.

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