ARC chamber for an ion implantation system

Details ARC chamber for an ion implantation system ARC chamber for an ion implantation system

1998-01-05

2000-02-08

Ramsey, Kenneth J.

Electric lamp or space discharge component or device manufacturi

Process

Electrode making

H01J 37317

Patent

active

060222581

ABSTRACT:
The present invention relates to the fabrication of materials and structures having selected mechanical, thermal and electrical properties. More particularly, the invention relates to the use of these materials and structures in ion implantation systems. Structures comprising boron material provide components for use in implanters including arc chambers with which a beam of ions is generated for implantation into a target such as a semiconductor wafer.

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Wolf, Berhard, Handbook of Ion Sources, Chapter 2, Charaterization of Ion Sources Section 2 (pp. 37-46), Section 3 (pp. 47-60), Section 4 (pp. 61-67) and Section 6 (pp. 93-100) 1995.
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