Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Patent
1998-08-21
1999-08-17
Utech, Benjamin
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
252 791, 252 795, 438745, C09K 1300
Patent
active
059393360
ABSTRACT:
Compositions of ammonium fluoride, propylene glycol, and water and methods of using these compositions to remove etch residues from silicon substrates which result from plasma or reactive ion etching of silicon substrate are provided. Not only do the compositions of the present invention overcome the environmental concerns associated with the use of ethylene glycol, but unlike previous compositions of ammonium fluoride in propylene glycol which are acidic, the compositions of the present invention are neutral to slightly basic (i.e., pH 7 to about pH 8). Hence, they remove etch residues from silicon substrates with minimal attack on other features on the silicon substrates.
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Micro)n Technology, Inc.
Okoro Bernadine
Utech Benjamin
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