Aqueous solution for cleaning a semiconductor substrate

Cleaning compositions for solid surfaces – auxiliary compositions – Cleaning compositions or processes of preparing – For cleaning a specific substrate or removing a specific...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

510435, 510499, 510504, 510505, 510506, H01L 21306, C11D 750

Patent

active

060666099

ABSTRACT:
Aqueous solutions for cleaning semiconductor substrates are formed primarily of a base, hydrogen peroxide and a complexing agent. The complexing agent is a heterocyclic hydrocarbon having a ring size of at least 9 and at most 18 atoms and at least 3 heteroatoms, for example nitrogen, oxygen or sulfur. In the case of nitrogen-containing cryptands, these may additionally be formed with functional reactive groups and/or aliphatic bridges between the nitrogen atoms (cage structures).

REFERENCES:
patent: 4885106 (1989-12-01), Lapham et al.
patent: 5049201 (1991-09-01), Cheng et al.
patent: 5051134 (1991-09-01), Schnegg et al.
patent: 5256779 (1993-10-01), Kerschner et al.
patent: 5290361 (1994-03-01), Hayashida et al.
patent: 5302311 (1994-04-01), Sugihara et al.
patent: 5589446 (1996-12-01), Unruh
patent: 5981454 (1999-11-01), Small
Patent Abstracts of Japan No. 91-313788.
Patent Abstracts of Japan No. 94-104779.
"Cleaning Solution Based on Hydrogen Peroxide for Use in Silicon Semiconductor Technology" (Kern et al.), RCA Review, Jun. 1970, pp. 187-207.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Aqueous solution for cleaning a semiconductor substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Aqueous solution for cleaning a semiconductor substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Aqueous solution for cleaning a semiconductor substrate will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1837129

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.