Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-02-28
2006-02-28
Marcheschi, Michael (Department: 1755)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C051S307000, C051S308000, C051S309000, C106S003000, C438S692000, C438S693000, C257SE21230, C257SE21304
Reexamination Certificate
active
07005382
ABSTRACT:
Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a production process of a semiconductor device. A first aqueous dispersion contains a water-soluble quaternary ammonium salt, an inorganic acid salt, abrasive grains and an aqueous medium. A second aqueous dispersion contains at least a water-soluble quaternary ammonium salt, another basic organic compound other than the water-soluble quaternary ammonium salt, an inorganic acid salt, a water-soluble polymer, abrasive grains and an aqueous medium. The second aqueous dispersion is composed of a first aqueous dispersion material (I) obtained by mixing a water-soluble quaternary ammonium salt and an inorganic acid salt into an aqueous medium, and a second aqueous dispersion material (II) obtained by mixing a water-soluble polymer and another basic organic compound other than the water-soluble quaternary ammonium salt into an aqueous medium. Abrasive grains are contained in at least one of the aqueous dispersion materials.
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Hattori Masayuki
Ida Kazuhiko
Kawahashi Nobuo
Matsui Yoshitaka
Miyashita Naoto
JSR Corporation
Kabushiki Kaisha Toshiba
Marcheschi Michael
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