Cleaning compositions for solid surfaces – auxiliary compositions – Cleaning compositions or processes of preparing – For cleaning a specific substrate or removing a specific...
Reexamination Certificate
2005-05-24
2009-10-20
Webb, Gregory E (Department: 1796)
Cleaning compositions for solid surfaces, auxiliary compositions
Cleaning compositions or processes of preparing
For cleaning a specific substrate or removing a specific...
C134S001300, C510S176000
Reexamination Certificate
active
07605113
ABSTRACT:
A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
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Bernhard David
Nguyen Long
Seijo Ma. Fatima
Wojtczak William A.
Advanced Technology & Materials Inc.
Fuierer Tristan A.
Lin Chih-Sheng (Jason)
Moore & Van Allen PLLC
Webb Gregory E
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