Compositions – Etching or brightening compositions
Reexamination Certificate
2005-05-24
2005-05-24
Alanko, Anita (Department: 1765)
Compositions
Etching or brightening compositions
C252S079200, C252S079300, C252S079400, C438S706000, C438S745000, C134S001200, C134S001300
Reexamination Certificate
active
06896826
ABSTRACT:
A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
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Bernhard David
Nguyen Long
Seijo Ma. Fatima
Wojtczak William A.
Advanced Technology & Materials Inc.
Alanko Anita
Chappuis Margaret
Fuierer Marianne
Fuierer Tristan Ann
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